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 Monolithic PIN SP5T Diode Switch
FEATURES
* * * * * * Ultra Broad Bandwidth: 50MHz to 26GHz 1.0 dB Insertion Loss 30 dB Isolation at 20GHz Reliable. Fully Monolithic Glass Encapsulated Construction
MASW-005100-1194
Rev 1
DESCRIPTION
The MASW-005100-1194 is a SP5T Series-Shunt broad band switch made with M/A-COM's HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in a low loss, low dispersion glass. This hybrid combination of Silicon and Glass gives HMIC Switches exceptional low loss and remarkable high isolation through low millimeter-wave frequencies.
APPLICATIONS
These high performance switches are suitable for the use in multi-band ECM, Radar, and instrumentation control circuits where high isolation to insertion loss ratios are required. With a standard +5 V/-5 V, TTL controlled PIN diode driver, 50ns switching speeds are achieved.
ABSOLUTE MAXIMUM RATINGS TAMB = +25C ( Unless otherwise specified )
PARAMETER OPERATING TEMPERATURE STORAGE TEMPERATURE RF C.W. INCIDENT POWER ( 20 mA ) BIAS CURRENT ( FORWARD ) APPLIED VOLTAGE ( REVERSE ) VALUE - 65C to +150C - 65C to +175C +33dBm 20mA - 25V
Note: Exceeding any of these values may result in permanent damage. Maximum operating conditions for combination of RF power, D.C. bias and temperature: +30dBm C.W., 15mA per diode @+85C
1
SP5T Monolithic Pin Diode Switch 005100-1194
MASWRev 1
TYPICAL DRIVER CONNECTIONS
CONTROL LEVEL ( DC CURRENT ) CONDITION OF RF OUTPUT
J2
-20 mA
J3 +20 mA
-20 mA
J4 +20 mA +20 mA
-20 mA
J5 +20 mA +20 mA +20 mA
-20 mA
J6 +20 mA +20 mA +20 mA +20 mA
-20 mA
J2-J1
Low Loss
J3-J1 Isolation
Low Loss
J4-J1 Isolation Isolation
Low Loss
J5-J1 Isolation Isolation Isolation
Low Loss
J6-J1 Isolation Isolation Isolation Isolation
Low Loss
+20 mA +20 mA +20 mA +20 mA
Isolation Isolation Isolation Isolation
+20 mA +20 mA +20 mA
Isolation Isolation Isolation
+20 mA +20 mA
Isolation Isolation
+20 mA
Isolation
(on-wafer measurements)
Electrical Specifications @ TAMB = 25C, 20 mA bias current
RF SPECIFICATIONS PARAMETER INSERTION LOSS ISOLATION INPUT RETURN LOSS OUTPUT RETURN LOSS SWITCHING SPEED FREQUENCY 20GHz 20GHz 20GHz 20GHz 10GHz
1
MIN
TYP 0.9
MAX
UNITS dB dB dB dB nS
1.4
28
38 22 23 50
Note: 1.) Typical switching speed is measured from 10% to 90% of the detected RF voltage driven by a TTL compatible driver. Driver output parallel RC network uses a capacitor between 390pF - 560pF and a resistor between 150 - 220 to achieve 50ns rise and fall times.
2
SP5T Monolithic Pin Diode Switch
MASW-005100-1194
Rev 1
Typical Microwave Performance
INSERTION LOSS
0.000 LOSS ( dB ) -0.200 -0.400 -0.600 -0.800 -1.000 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 FREQUENCY ( GHz ) J2 J3 J4 J5 J6
ISOLATION 0 -10 -20 -30 -40 -50 -60 -70 -80 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0
FREQUENCY ( GHz )
ISOLATION ( dB )
J2
J3
J4
J5
J6
3
SP5T Monolithic Pin Diode Switch
MASW-005100-1194
Rev 1
Typical Microwave Performance
OUTPUT RETURN LOSS
0.000 -5.000 -10.000 -15.000 -20.000 -25.000 -30.000 -35.000 -40.000 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0
FREQUENCY ( GHz )
LOSS ( dB )
J2
J3
J4
J5
J6
INPUT RET URN LO SS 0. -5. -10. -15. LO SS -20. (dB) -25. -30. -35. -40. 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0
FREQ UENCY ( G Hz )
J2
J3
J4
J5
J6
4
SP5T Monolithic Pin Diode Switch
MASW-005100-1194
Rev 1
ASSEMBLY INSTRUCTIONS Cleanliness
These chips should be handled in a clean environment free of organic contamination.
Electro-Static Sensitivity
The MASW-00 Series PIN switches are ESD, Class 1A sensitive (HBM). The proper ESD handling procedures must be used.
Wire Bonding
Thermosonic wedge wire bonding using 0.003" x 0.00025" ribbon or 0.001" diameter gold wire is recommended. A stage temperature of 150C and a force of 18 to 22 grams should be used. Ultrasonic energy should be adjusted to the minimum required. RF bonds should be kept as short as possible to minimize inductance.
Mounting
These chips have Ti-Pt-Au back metal. They can be die mounted with a 80Au/20Sn or electrically conductive Ag epoxy. Mounting surface must be flat and clean of oils and contaminants.
Eu Eutectic Die Attachment
An 80/20 gold-tin eutectic solder preform is recommended with a work surface temperature of 255C and a tool tip temperature of 265C. When hot gas is applied, the tool tip temperature should be 290C. The chip should not be exposed to temperatures greater than 320C for more than 10 seconds. No more than three seconds should be required for the die attachment.
Epoxy Die Attachment
Assembly should be preheated to 125C-150C. A Controlled thickness of 2 mils is recommended for best electrical and thermal conductivity. A thin epoxy fillet should be visible around the perimeter of the chip after placement to ensure complete coverage. Cure epoxy per manufacturer's recommended schedule.
5
SP5T Monolithic Pin Diode Switch
MASW-005100-1194
Rev 1
Operation of the MASW-005100-1194 Switch
The simultaneous application of negative DC current to the Low Loss Port and positive DC current to the remaining Isolated Ports as shown in Figure 1 achieves operation of the MASW-005100-1194 diode switch. The backside area of the die is the RF and DC return ground plane. The DC return is achieved on common Port J1. Constant current sources should supply the DC control currents. The voltages at these points will not exceed + 1.5 volts (1.2 volts typical) for supply currents up to 20 mA. In the Low Loss state, the Series Diode must be forward biased and the Shunt Diode reverse biased. For all the isolated ports, the Shunt Diode is forward biased and the Series Diode is reverse biased. The bias network design should yield >30 dB RF to DC isolation. Best Insertion Loss, P1dB, IP3, and switching speed are achieved by using a voltage pull-up
resistor in the DC return path, ( J1 ). A minimum value of | -2V | is recommended at this return node, which is achievable with a standard , 65V TTL controlled PIN diode driver. A typical DC bias schematic for 2-18 GHz operation is shown in Figure 1.
2 - 18 GHz Bias Network Schematic
J1
39 pF
22 pF DC Bias 22 nH 39 pF
100
22 nH HMIC Switch Die J6 22 pF J2
J5
J4
J3
Fig. 1
6
SP5T Monolithic Pin Diode Switch
MASW-005100-1194
Rev 1
MASW-005100-1194 Chip Dimensions
A B
Nominal Chip Dimensions
DIM A B C
INCHES 0.068 0.034 0.058 0.037 0.030 0.030 0.033 .005 X .005 0.005
M 1730 865 1480 945 750 750 825 120 X 120 120
C G D
D E F G All Pads Thickness
F
E
ORDERING INFORMATION
Part Number
MASW-005100-11940W
Package
Waffle Pack
7


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